Scaling Of Feature Size Of Devices Free Essay Example

Continues scaling of feature size of devices has improved the VLSI technology. Integrated circuit has large number of devices and components like transistor which are electrically interconnected. Technology scaling has improved the transistor performance however interconnect performance has been degraded. In mid-1980’s solely gate delay was take into account for timing characteristics, however as technology scales down gate delay has been diminished but interconnect delay has been multiplied.

Accordingly interconnect delay dominate the gate delay. Along these lines, resistance and capacitance of wire increment fundamentally offering rise to propagation delay.

Consequently RC impact is significant constraining variable in interconnect performance as feature size scales down. Because of contracting of device size, Al interconnects enduring high electromigration resistance in mid1990’s which was supplanted by Copper having low resistivity and high current conveying ability. The electron MFP (?) of copper is 40nm at room temperature [1]. Be that as it may, in mid-2000’s, as the technology scaling came to up to 45nm copper interconnect likewise begin enduring high resistance issues because of electromigration, surface and grain limit dispersing of electron [2] which will be obstacle if further scaling proceeds underneath 32nm [3, 4].

It causes higher propagation delay and power consumption this way degrading system performance of VLSI circuit. The need to diminish the RC delay, the power consumption, and the cross-talk commotion is as of now the fundamental main thrust behind the presentation of new materials. Along these lines, Researchers are exploring conceivable contrasting options to Cu to enhance the interconnect performance.

As indicated by the [4], contrasting option to copper interconnect technology, most encouraging alternative for future interconnect technology are carbon produced material [5].

It has solid abilities to give much preferred performance over that of Cu wires. Carbon Nanotube (CNT) has great ballistic transport and vast current conveying capacity than copper with no electromigration. At the point when contrast with Copper CNT has huge mean free path, promising thermal and electrical conductivity [6, 7]. Graphene nanostructures has a high melting point compared to copper henceforth, it can with stand for high temperature. The CNT can be delegated Single-Walled CNT (SWCNT) which comprises of single graphene shell [8] and Multi-Walled CNT (MWCNT) which comprises of a few SWCNTs settled concentrically of varying diameter [9]. In sensible, CNT comprise of both SWCNT and MWCNT which is known as Mixed CNT Bundle (MCB).

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